Journal of the Electrochemical Society
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Publication Venue For
- Diamond for biosensing: Electrochemical detection of NOx species with thiol-amine functionalized diamond. 162:B225-B229. 2015
- Disinfection of E. coli contaminated urine using boron-doped diamond electrodes. 161:G81-G85. 2014
- InAs(100) surfaces cleaning by an As-Free low-temperature 100°C treatment. 156. 2009
- Alloying effects of cosputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte. 155. 2008
- Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. 146:1536-1539. 1999
- Selective wet etchinq of lithium gallate. 145. 1998
- Analysis of GaAs substrate removal etching with citric acid:H 2 O 2 and NH 4 OH:H 2 O 2 for application to compliant substrates. 144:L29-L31. 1997
- Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates. 144. 1997
- Physical models of boron diffusion in ultrathin gate oxides. 144:708-717. 1997
- A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding. 142:201-203. 1995
- Substrate Doping and Microroughness Effects in RTP Temperature Measurement by in Situ Ellipsometry. 141:737-741. 1994
- Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry. 141:539-542. 1994
- Resolution of Silicon Wafer Temperature Measurement by in Situ Ellipsometry in a Rapid Thermal Processor. 140:2673-2678. 1993
- Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry. 140:1734-1743. 1993
- Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments. 138:3483-3491. 1991
- Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Oxygen Precipitation/Front-Surface Stacking-Fault Growth Experiments. 138:3492-3498. 1991
- Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements. 138:3435-3439. 1991
- Resistivity and Activation Energy of CdTe Electrodeposited at Various Cd(II) Concentrations. 138:250-254. 1991
- Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. 137:1573-1579. 1990
- Point Defect Charge-State Effects on Transient Diffusion of Dopants in Si. 137:667-671. 1990
- The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. 137:2599-2603. 1990
- A PHYSICAL MODEL FOR THE OBSERVED DEPENDENCE OF THE METAL-SEMICONDUCTOR WORKFUNCTION DIFFERENCE ON SUBSTRATE ORIENTATION. 135:C136-C136. 1988
- MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES. 134:C451-C451. 1987
- CHARACTERIZATION AND MODELING OF THE DIFFUSION OF BORON AND ARSENIC IN SI IN DRY O2/HCL MIXTURES. 134:C124-C125. 1987
- POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH. 134:C125-C125. 1987
- Photoelectrochemical Deposition of Cadmium Telluride Using Tri-N-Butylphosphine Telluride. 134:440-443. 1987
- Point Defect Generation during Phosphorus Diffusion in Silicon I. Concentrations above Solid Solubility. 134:1508-1518. 1987
- DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PTCR ALLOYS. 133:C120-C120. 1986
- Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants. 132:1745-1753. 1985
- Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results. 132:2685-2693. 1985
- Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms. 132:2693-2700. 1985
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon. 131:2387-2394. 1984
- On the Doping Dependence of Oxidation-Induced Stacking Fault Shrinkage in Silicon. 129:2319-2321. 1982
- Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview. 128:1360-1368. 1981
- CRITICAL PITTING POTENTIAL OF ALUMINUM IN AQUEOUS GLYCOL SOLUTIONS. 127:C357-C357. 1980
- Aluminum Corrosion in Uninhibited Ethylene Glycol-Water Solutions. 126:11-15. 1979
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. 125:995-997. 1978
- Analysis of Phosphorus-Diffused Layers in Silicon. 125:323-327. 1978
- CORROSION AND CORROSION INHIBITION OF ALUMINUM SOLAR HEAT COLLECTORS. 125:C367-C367. 1978
- EFFECTS OF HEAT-TREATMENT ON ELECTRON TRAPPING CHARACTERISTICS OF SIO2 AT 300-DEGREES-K AND 77-DEGREES-K. 125:C127-C127. 1978
- Quantified Conditions for Emitter-Misfit Dislocation Formation in Silicon. 125:923-926. 1978
- Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter. 125:997-998. 1978
- Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O2 Oxidation. 125:2050-2058. 1978
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect. 124:1107-1118. 1977
- ALUMINUM CORROSION IN ETHYLENE GLYCOL-WATER MIXTURES. 124:C94-C94. 1977
- Boron Diffusion in Silicon-Concentration and Orientation Dependence, Background Effects, and Profile Estimation. 122:800-805. 1975
- Diffusion of Ion-Implanted B in High Concentration P- and As-Doped Silicon. 122:1241-1244. 1975
- The Diffusion of Ion-Implanted Arsenic in Silicon. 122:1689-1696. 1975
- HIGH CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE.. 119:1389-1394. 1972
- COMPUTER-SIMULATION OF OXYGEN PRECIPITATION AND DENUDED ZONE FORMATION IN CZOCHRALSKI SILICON 1984
- GROWTH AND MAINTENANCE OF A MINERAL ARMOR ON THE ICY SATELLITES OF JUPITER 1979
- SURFACE ENRICHMENT INDUCED BY ION-BOMBARDMENT 1977