Electronics Letters

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  Publication Venue For

  • Miniaturised X-band balanced microwave limiter based on thin film hybrid integrated circuit technology.  52:1318-1319. 2016
  • Compact low-power instant store and restore D flip-flop using a selfcomplementing spintronic device.  52:1238-1240. 2016
  • Compact sext-band bandpass filter based on single multimode resonator with high band-to-band isolations.  52:729-731. 2016
  • Solar cell stacked dual-polarised patch antenna for 5.8 GHz band WiMAX network.  49:1514-1515. 2013
  • UWB meshed solar monopole antenna.  49:582-584. 2013
  • Suppressing long tail in impulse response of MSM photodetectors using slow hole current subtraction.  43:827-828. 2007
  • Cost model driven test resource partitioning for SoCs.  42:915-917. 2006
  • Cost function selection for wavelet-based VBR video traffic smoothing.  40:1509-1511. 2004
  • Quantum dot infrared photodetector design based on double-barrier resonant tunnelling.  40:1082-1083. 2004
  • High responsivity AIAs/InAs/GaAs superlattice quantum dot infrared photodetector.  40:197-198. 2004
  • Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors.  38:1708-1709. 2002
  • Polymeric buried core adiabatic optical spot-size transformer.  38:319-321. 2002
  • 10 Gbit∕s transmission over 50 km nonzero dispersion-shifted fibre using 1.3 [micro sign]m directly modulated uncooled transmitters.  38:864-864. 2002
  • RED parameters and performance of TCP connections.  37:1489-1491. 2001
  • Vertically tapered core polymeric optical spot-size transformer.  37:1475-1476. 2001
  • Image enhancement in optical coherence tomography using deconvolution.  33:1365-1367. 1997
  • Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon.  33:1183-1184. 1997
  • High efficiency thin-film GaAs-based MSM photodetectors.  32:394-395. 1996
  • Control of chaosin the boost converter.  31:841-842. 1995
  • Unified approach to the implementations of universal active devices.  30:618-620. 1994
  • Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers.  30:1631-1632. 1994
  • AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers.  29:1324-1326. 1993
  • Combined hierarchical placement algorithm for row-based layouts.  29:1508-1510. 1993
  • Wave-orientated processing of scattering data.  29:1930-1932. 1993
  • Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach.  27:2281-2283. 1991
  • Microwave characterisation of 1 μm-gate al0.48ln0.52as/ga0.47ln0.53as/lnp modfets.  23:53-55. 1987