Japanese Journal of Applied Physics
-
Publication Venue For
- Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion. 32:4857-4862. 1993
- Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion. 32:4857-4862. 1993
- Causes and prevention of temperature-dependent bubbles in silicon wafer bonding. 30:615-622. 1991
- A model for the silicon wafer bonding process. 28:1735-1741. 1989