Diamond and Related Materials

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  Publication Venue For

  • Selected Topics on the Synthesis, Properties and Applications of Multiwalled Carbon Nanotubes..  42:49-57. 2014
  • Carbon nanostructures: A morphological classification for charge density optimization.  23:130-134. 2012
  • Direct fusion bonding of silicon to polycrystalline diamond.  11:482-486. 2002
  • Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25-30, 1994.  4:15. 1995
  • Some effects of silicon substrate roughness on the growth of highly oriented 〈100〉 diamond films.  4:406-409. 1995
  • Assessing polar and azimuthal correlations for an oriented mosaic of (001) diamond crystallites on (001) silicon.  4:1289-1295. 1995
  • Cathodoluminescence studies of oriented diamond films.  3:926-931. 1994
  • Effect of native SiO2 layer on the nucleation of diamond using a combustion flame.  3:239-244. 1994
  • Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon.  3:382-387. 1994
  • Preface to the proceedings of the 4th European conference on diamond, diamond-like and related materials (diamond films '93), Albufeira, Portugal, September 20-24, 1993.  3:15. 1994
  • The effect of substrate material on bias-enhanced diamond nucleation.  3:1188-1195. 1994
  • Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements.  2:841-846. 1993
  • Correlation of interface chemistry to electrical properties of metal contacts on diamond.  2:963-969. 1993
  • Fabrication of diamond thin-film thermistors for high-temperature applications.  2:816-819. 1993
  • Comparison of the electric properties of single-crystal and polycrystalline diamond by Hall effect and capacitance-voltage measurements.  2:841-846. 1993
  • Fabrication of diamond thin-film thermistors for high-temperature applications.  2:816-819. 1993
  • Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.  2:142-146. 1993
  • Geometric modeling of the diamond-β-SiC heteroepitaxial interface.  2:590-596. 1993
  • Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch.  2:438-442. 1993
  • Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.  2:142-146. 1993
  • Geometric modeling of the diamond-β-SiC heteroepitaxial interface.  2:590-596. 1993
  • Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch.  2:438-442. 1993
  • Titanium carbide rectifying contacts on boron-doped polycrystalline diamond.  2:37-40. 1993
  • Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase.  1:25-32. 1991