Diamond and Related Materials
-
Publication Venue For
-
Selected Topics on the Synthesis, Properties and Applications of Multiwalled Carbon Nanotubes..
42:49-57.
2014
-
Carbon nanostructures: A morphological classification for charge density optimization.
23:130-134.
2012
-
Silicon-on-diamond: An advanced silicon-on-insulator technology.
14:308-313.
2005
-
Wafer bonding of highly oriented diamond to silicon.
13:1816-1821.
2004
-
Processing routes for direct bonding of silicon to epitaxially textured diamond.
12:257-261.
2003
-
Thermal conductivity of epitaxially textured diamond films.
12:61-64.
2003
-
Direct fusion bonding of silicon to polycrystalline diamond.
11:482-486.
2002
-
Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality.
10:2092-2095.
2001
-
Process optimization in the low-pressure flat flame growth of diamond.
10:289-294.
2001
-
Oriented diamond growth on platinum via a metal-carbon-hydrogen low-pressure processing route.
6:1747-1752.
1997
-
Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25-30, 1994.
4:15.
1995
-
Some effects of silicon substrate roughness on the growth of highly oriented 〈100〉 diamond films.
4:406-409.
1995
-
Assessing polar and azimuthal correlations for an oriented mosaic of (001) diamond crystallites on (001) silicon.
4:1289-1295.
1995
-
Cathodoluminescence studies of oriented diamond films.
3:926-931.
1994
-
Effect of native SiO2 layer on the nucleation of diamond using a combustion flame.
3:239-244.
1994
-
Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon.
3:382-387.
1994
-
Preface to the proceedings of the 4th European conference on diamond, diamond-like and related materials (diamond films '93), Albufeira, Portugal, September 20-24, 1993.
3:15.
1994
-
The effect of substrate material on bias-enhanced diamond nucleation.
3:1188-1195.
1994
-
Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements.
2:841-846.
1993
-
Correlation of interface chemistry to electrical properties of metal contacts on diamond.
2:963-969.
1993
-
Fabrication of diamond thin-film thermistors for high-temperature applications.
2:816-819.
1993
-
Comparison of the electric properties of single-crystal and polycrystalline diamond by Hall effect and capacitance-voltage measurements.
2:841-846.
1993
-
Fabrication of diamond thin-film thermistors for high-temperature applications.
2:816-819.
1993
-
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.
2:142-146.
1993
-
Geometric modeling of the diamond-β-SiC heteroepitaxial interface.
2:590-596.
1993
-
Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch.
2:438-442.
1993
-
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.
2:142-146.
1993
-
Geometric modeling of the diamond-β-SiC heteroepitaxial interface.
2:590-596.
1993
-
Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch.
2:438-442.
1993
-
Titanium carbide rectifying contacts on boron-doped polycrystalline diamond.
2:37-40.
1993
-
Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase.
1:25-32.
1991