Non-vacuum methods for formation of Cu(In, Ga)(Se, S) 2 thin film photovoltaic absorbers


Journal Article

Polycrystalline thin films of copper indium diselenide and its alloys with gallium and sulphur (CIGS) have proven to be suitable for use as absorbers in high-efficiency solar cells. Record efficiency devices of 20% power conversion efficiency have been produced by co-evaporation of the elements under high vacuum. However, non-vacuum methods for absorber deposition promise significantly lower capital expenditure and reduced materials costs, and have been used to produce devices with efficiencies of up to 14%. Such efficiencies are already high enough for commercial up-scaling to be considered and several companies are now trying to develop products based on non-vacuum deposited CIGS absorbers. This article will review the wide range of non-vacuum techniques that have been used to deposit CIGS thin films, highlighting the state of the art and efforts towards commercialization. Copyright © 2009 John Wiley & Sons, Ltd.

Full Text

Duke Authors

Cited Authors

  • Hibberd, CJ; Chassaing, E; Liu, W; Mitzi, DB; Lincot, D; Tiwari, AN

Published Date

  • September 1, 2010

Published In

Volume / Issue

  • 18 / 6

Start / End Page

  • 434 - 452

Electronic International Standard Serial Number (EISSN)

  • 1099-159X

International Standard Serial Number (ISSN)

  • 1062-7995

Digital Object Identifier (DOI)

  • 10.1002/pip.914

Citation Source

  • Scopus