Growth of high-density-aligned and semiconducting-enriched single-walled carbon nanotubes: decoupling the conflict between density and selectivity.

Published

Journal Article

Single-walled carbon nanotubes (SWNTs) are highly desired for future electronic applications due to the excellent electrical, mechanical, and thermal properties. However, the density and the selectivity in the growth of aligned semiconducting nanotubes do not coexist previously: when the selectivity is high, the density is low and vice versa. In the present work, we found that random carbon nanotubes (CNTs) in the catalyst area block the growth of aligned SWNTs along the lattice structure on the quartz surface, thus significantly reducing the density of nanotubes during growth. More interestingly, it was shown that the random CNTs can be selectively removed through appropriate treatments using water vapor as an in situ etchant while the aligned SWNTs survive even after long-time water vapor treatment. To obtain high-density semiconducting SWNT arrays, we designed an improved multiple-cycle growth method, which included the treatment of SWNTs with water vapor after each growth cycle without cooling the system. Using this method, we have successfully obtained dense semiconducting SWNTs (∼10 SWNTs/μm) over large areas and with high uniformity.

Full Text

Duke Authors

Cited Authors

  • Li, J; Liu, K; Liang, S; Zhou, W; Pierce, M; Wang, F; Peng, L; Liu, J

Published Date

  • January 2014

Published In

Volume / Issue

  • 8 / 1

Start / End Page

  • 554 - 562

PubMed ID

  • 24295396

Pubmed Central ID

  • 24295396

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

International Standard Serial Number (ISSN)

  • 1936-0851

Digital Object Identifier (DOI)

  • 10.1021/nn405105y

Language

  • eng