The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

Journal Article

The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors. © 2013 AIP Publishing LLC.

Full Text

Duke Authors

Cited Authors

  • Simmons, JG; Foreman, JV; Liu, J; Everitt, HO

Published Date

  • November 11, 2013

Published In

Volume / Issue

  • 103 / 20

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4829745

Citation Source

  • Scopus