The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities
Publication
, Journal Article
Simmons, JG; Foreman, JV; Liu, J; Everitt, HO
Published in: Applied Physics Letters
November 11, 2013
The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors. © 2013 AIP Publishing LLC.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 11, 2013
Volume
103
Issue
20
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Simmons, J. G., Foreman, J. V., Liu, J., & Everitt, H. O. (2013). The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities. Applied Physics Letters, 103(20). https://doi.org/10.1063/1.4829745
Simmons, J. G., J. V. Foreman, J. Liu, and H. O. Everitt. “The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities.” Applied Physics Letters 103, no. 20 (November 11, 2013). https://doi.org/10.1063/1.4829745.
Simmons JG, Foreman JV, Liu J, Everitt HO. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities. Applied Physics Letters. 2013 Nov 11;103(20).
Simmons, J. G., et al. “The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities.” Applied Physics Letters, vol. 103, no. 20, Nov. 2013. Scopus, doi:10.1063/1.4829745.
Simmons JG, Foreman JV, Liu J, Everitt HO. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities. Applied Physics Letters. 2013 Nov 11;103(20).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 11, 2013
Volume
103
Issue
20
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences