PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON.
Publication
, Journal Article
Tice, WK; Tan, TY
Published in: Mat Res Soc Symp Proc
December 1, 1981
Duke Scholars
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
367 / 380
Citation
APA
Chicago
ICMJE
MLA
NLM
Tice, W. K., & Tan, T. Y. (1981). PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON. Mat Res Soc Symp Proc, 2, 367–380.
Tice, W. K., and T. Y. Tan. “PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON.” Mat Res Soc Symp Proc 2 (December 1, 1981): 367–80.
Tice WK, Tan TY. PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON. Mat Res Soc Symp Proc. 1981 Dec 1;2:367–80.
Tice, W. K., and T. Y. Tan. “PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON.” Mat Res Soc Symp Proc, vol. 2, Dec. 1981, pp. 367–80.
Tice WK, Tan TY. PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON. Mat Res Soc Symp Proc. 1981 Dec 1;2:367–380.
Published In
Mat Res Soc Symp Proc
Publication Date
December 1, 1981
Volume
2
Start / End Page
367 / 380