P-type GaN grown by phase shift epitaxy
Publication
, Journal Article
Zhong, M; Roberts, J; Kong, W; Brown, AS; Steckl, AJ
Published in: Applied Physics Letters
January 6, 2014
Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4 × 1018 cm-3). © 2014 AIP Publishing LLC.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 6, 2014
Volume
104
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Zhong, M., Roberts, J., Kong, W., Brown, A. S., & Steckl, A. J. (2014). P-type GaN grown by phase shift epitaxy. Applied Physics Letters, 104(1). https://doi.org/10.1063/1.4861058
Zhong, M., J. Roberts, W. Kong, A. S. Brown, and A. J. Steckl. “P-type GaN grown by phase shift epitaxy.” Applied Physics Letters 104, no. 1 (January 6, 2014). https://doi.org/10.1063/1.4861058.
Zhong M, Roberts J, Kong W, Brown AS, Steckl AJ. P-type GaN grown by phase shift epitaxy. Applied Physics Letters. 2014 Jan 6;104(1).
Zhong, M., et al. “P-type GaN grown by phase shift epitaxy.” Applied Physics Letters, vol. 104, no. 1, Jan. 2014. Scopus, doi:10.1063/1.4861058.
Zhong M, Roberts J, Kong W, Brown AS, Steckl AJ. P-type GaN grown by phase shift epitaxy. Applied Physics Letters. 2014 Jan 6;104(1).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 6, 2014
Volume
104
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences