Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon

Published

Journal Article

A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2. © 2009 Optical Society of America.

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM

Published Date

  • December 1, 2009

Published In

Electronic International Standard Serial Number (EISSN)

  • 2162-2701

Citation Source

  • Scopus