Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon
Journal Article
A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm 2 . © 2009 Optical Society of America.
Duke Authors
Cited Authors
- Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM
Published Date
- December 1, 2009
Published In
Electronic International Standard Serial Number (EISSN)
- 2162-2701
Citation Source
- Scopus