Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors


Journal Article

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Full Text

Duke Authors

Cited Authors

  • Kagan, CR; Mitzi, DB; Dimitrakopoulos, CD

Published Date

  • October 1999

Published In

Volume / Issue

  • 286 / 5441

Start / End Page

  • 945 - 947

PubMed ID

  • 10542146

Pubmed Central ID

  • 10542146

Electronic International Standard Serial Number (EISSN)

  • 1095-9203

International Standard Serial Number (ISSN)

  • 0036-8075

Digital Object Identifier (DOI)

  • 10.1126/science.286.5441.945


  • eng