Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

Published

Journal Article

Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. © 2007 Optical Society of America.

Duke Authors

Cited Authors

  • Zhao, Z; Lantz, KR; Yi, C; Stiff-Roberts, AD

Published Date

  • January 1, 2007

Published In

Electronic International Standard Serial Number (EISSN)

  • 2162-2701

Citation Source

  • Scopus