High-performance air-stable n-type carbon nanotube transistors with erbium contacts


Journal Article

So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals - erbium, lanthanum, and yttrium - are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation. © 2013 American Chemical Society.

Full Text

Duke Authors

Cited Authors

  • Shahrjerdi, D; Franklin, AD; Oida, S; Ott, JA; Tulevski, GS; Haensch, W

Published Date

  • September 24, 2013

Published In

Volume / Issue

  • 7 / 9

Start / End Page

  • 8303 - 8308

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

International Standard Serial Number (ISSN)

  • 1936-0851

Digital Object Identifier (DOI)

  • 10.1021/nn403935v

Citation Source

  • Scopus