Carbon nanotube complementary wrap-gate transistors

Published

Journal Article

Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to 20 nm in the ideal gate-all-around geometry. Uniformity of the gate wrapping the nanotube channels is confirmed, and the process is shown not to damage the CNTs. Further, both n- and p-type transistors were realized by using the appropriate gate dielectric - HfO2 yielded n-type and Al2O3 yielded p-type - with quantum simulations used to explore the impact of important device parameters on performance. These discoveries not only provide a promising platform for further research into gate-all-around CNT devices but also demonstrate that scalable digital switches with realistic technological potential can be achieved with carbon nanotubes. © 2013 American Chemical Society.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Koswatta, SO; Farmer, DB; Smith, JT; Gignac, L; Breslin, CM; Han, SJ; Tulevski, GS; Miyazoe, H; Haensch, W; Tersoff, J

Published Date

  • June 12, 2013

Published In

Volume / Issue

  • 13 / 6

Start / End Page

  • 2490 - 2495

Electronic International Standard Serial Number (EISSN)

  • 1530-6992

International Standard Serial Number (ISSN)

  • 1530-6984

Digital Object Identifier (DOI)

  • 10.1021/nl400544q

Citation Source

  • Scopus