High-density integration of carbon nanotubes via chemical self-assembly


Journal Article

Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications1-7. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 109 cm-2 - two orders of magnitude higher than previous reports8,9. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity. Copyright © 2012 Macmillan Publishers Limited.

Full Text

Duke Authors

Cited Authors

  • Park, H; Afzali, A; Han, SJ; Tulevski, GS; Franklin, AD; Tersoff, J; Hannon, JB; Haensch, W

Published Date

  • January 1, 2012

Published In

Volume / Issue

  • 7 / 12

Start / End Page

  • 787 - 791

Electronic International Standard Serial Number (EISSN)

  • 1748-3395

International Standard Serial Number (ISSN)

  • 1748-3387

Digital Object Identifier (DOI)

  • 10.1038/nnano.2012.189

Citation Source

  • Scopus