Variability in carbon nanotube transistors: Improving device-to-device consistency


Journal Article

The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle. © 2012 American Chemical Society.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Tulevski, GS; Han, SJ; Shahrjerdi, D; Cao, Q; Chen, HY; Wong, HSP; Haensch, W

Published Date

  • February 28, 2012

Published In

Volume / Issue

  • 6 / 2

Start / End Page

  • 1109 - 1115

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

International Standard Serial Number (ISSN)

  • 1936-0851

Digital Object Identifier (DOI)

  • 10.1021/nn203516z

Citation Source

  • Scopus