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Variability in carbon nanotube transistors: Improving device-to-device consistency

Publication ,  Journal Article
Franklin, AD; Tulevski, GS; Han, SJ; Shahrjerdi, D; Cao, Q; Chen, HY; Wong, HSP; Haensch, W
Published in: ACS Nano
February 28, 2012

The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle. © 2012 American Chemical Society.

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Published In

ACS Nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

February 28, 2012

Volume

6

Issue

2

Start / End Page

1109 / 1115

Related Subject Headings

  • Nanoscience & Nanotechnology
 

Citation

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Franklin, A. D., Tulevski, G. S., Han, S. J., Shahrjerdi, D., Cao, Q., Chen, H. Y., … Haensch, W. (2012). Variability in carbon nanotube transistors: Improving device-to-device consistency. ACS Nano, 6(2), 1109–1115. https://doi.org/10.1021/nn203516z
Franklin, A. D., G. S. Tulevski, S. J. Han, D. Shahrjerdi, Q. Cao, H. Y. Chen, H. S. P. Wong, and W. Haensch. “Variability in carbon nanotube transistors: Improving device-to-device consistency.” ACS Nano 6, no. 2 (February 28, 2012): 1109–15. https://doi.org/10.1021/nn203516z.
Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, et al. Variability in carbon nanotube transistors: Improving device-to-device consistency. ACS Nano. 2012 Feb 28;6(2):1109–15.
Franklin, A. D., et al. “Variability in carbon nanotube transistors: Improving device-to-device consistency.” ACS Nano, vol. 6, no. 2, Feb. 2012, pp. 1109–15. Scopus, doi:10.1021/nn203516z.
Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HSP, Haensch W. Variability in carbon nanotube transistors: Improving device-to-device consistency. ACS Nano. 2012 Feb 28;6(2):1109–1115.
Journal cover image

Published In

ACS Nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

February 28, 2012

Volume

6

Issue

2

Start / End Page

1109 / 1115

Related Subject Headings

  • Nanoscience & Nanotechnology