Sub-10 nm carbon nanotube transistor.
Journal Article (Journal Article)
Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density (2.41 mA/μm) at a low operating voltage of 0.5 V. The nanotube transistor exhibits an impressively small inverse subthreshold slope of 94 mV/decade-nearly half of the value expected from a previous theoretical study. Numerical simulations show the critical role of the metal-CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube. The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies.
Full Text
Duke Authors
Cited Authors
- Franklin, AD; Luisier, M; Han, S-J; Tulevski, G; Breslin, CM; Gignac, L; Lundstrom, MS; Haensch, W
Published Date
- February 2012
Published In
Volume / Issue
- 12 / 2
Start / End Page
- 758 - 762
PubMed ID
- 22260387
Electronic International Standard Serial Number (EISSN)
- 1530-6992
International Standard Serial Number (ISSN)
- 1530-6984
Digital Object Identifier (DOI)
- 10.1021/nl203701g
Language
- eng