Double contacts for improved performance of graphene transistors
Publication
, Journal Article
Franklin, AD; Han, SJ; Bol, AA; Perebeinos, V
Published in: IEEE Electron Device Letters
January 1, 2012
A new double-contact geometry for graphene devices is studied and compared to traditional top contacts. Double contacts consist of metal below and above the graphene in a sandwich-type configuration. Four-probe structures were tested for both single-layer [chemical-vapor-deposition (CVD)-grown] graphene and bilayer (mechanically exfoliated) graphene, with both showing a decrease in contact resistance of at least 40% and an increase in transconductance greater than 20%. CVD-grown single-layer graphene transistors exhibited contact resistance as low as 260 Ωμm, with an average of 320 Ωμm. This new geometry can help minimize the impact of contacts on graphene device performance. © 2011 IEEE.
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Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
January 1, 2012
Volume
33
Issue
1
Start / End Page
17 / 19
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
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MLA
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Franklin, A. D., Han, S. J., Bol, A. A., & Perebeinos, V. (2012). Double contacts for improved performance of graphene transistors. IEEE Electron Device Letters, 33(1), 17–19. https://doi.org/10.1109/LED.2011.2173154
Franklin, A. D., S. J. Han, A. A. Bol, and V. Perebeinos. “Double contacts for improved performance of graphene transistors.” IEEE Electron Device Letters 33, no. 1 (January 1, 2012): 17–19. https://doi.org/10.1109/LED.2011.2173154.
Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors. IEEE Electron Device Letters. 2012 Jan 1;33(1):17–9.
Franklin, A. D., et al. “Double contacts for improved performance of graphene transistors.” IEEE Electron Device Letters, vol. 33, no. 1, Jan. 2012, pp. 17–19. Scopus, doi:10.1109/LED.2011.2173154.
Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors. IEEE Electron Device Letters. 2012 Jan 1;33(1):17–19.
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
January 1, 2012
Volume
33
Issue
1
Start / End Page
17 / 19
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering