Vertical carbon nanotube devices with nanoscale lengths controlled without lithography


Journal Article

Vertical single-walled carbon nanotubes (v-SWCNTs) are synthesized within highly ordered porous anodic alumina (PAA) templates supported on Si substrates. A process for obtaining thin-film PAA with long-range ordered nanopores is presented in this paper. Each nanopore contains at most one v-SWCNT that is supported by a dielectric and addressed by electrochemically formed Pd nanowire source contacts and evaporated Pd drain contacts. Characteristics of these completely vertical, two-terminal nanotube devices are presented. Control of the v-SWCNT length is demonstrated using a straightforward etching process with lengths of less than 100nm achieved without the need for complex/expensive lithography. This effective nanoscale length control of highly ordered v-SWCNTs provides a practical basis for the realization of CNT-based nanoelectronics. © 2006 IEEE.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Sayer, RA; Sands, TD; Janes, DB; Fisher, TS

Published Date

  • July 1, 2009

Published In

Volume / Issue

  • 8 / 4

Start / End Page

  • 469 - 476

International Standard Serial Number (ISSN)

  • 1536-125X

Digital Object Identifier (DOI)

  • 10.1109/TNANO.2009.2012399

Citation Source

  • Scopus