Toward surround gates on vertical single-walled carbon nanotube devices

Published

Journal Article

The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs. © 2009 American Vacuum Society.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD; Sayer, RA; Sands, TD; Fisher, TS; Janes, DB

Published Date

  • April 20, 2009

Published In

Volume / Issue

  • 27 / 2

Start / End Page

  • 821 - 826

International Standard Serial Number (ISSN)

  • 1071-1023

Digital Object Identifier (DOI)

  • 10.1116/1.3054266

Citation Source

  • Scopus