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Voltage switching of a VO2 memory metasurface using ionic gel

Publication ,  Journal Article
Goldflam, MD; Liu, MK; Chapler, BC; Stinson, HT; Sternbach, AJ; McLeod, AS; Zhang, JD; Geng, K; Royal, M; Kim, BJ; Averitt, RD; Jokerst, NM ...
Published in: Applied Physics Letters
July 28, 2014
Published version (DOI)

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface. © 2014 AIP Publishing LLC.

Duke Scholars

Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering
David R. Smith
Author David R. Smith Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.4891765

ISSN

0003-6951

Publication Date

July 28, 2014

Volume

105

Issue

4

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

APA
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MLA
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Goldflam, M. D., Liu, M. K., Chapler, B. C., Stinson, H. T., Sternbach, A. J., McLeod, A. S., … Basov, D. N. (2014). Voltage switching of a VO2 memory metasurface using ionic gel. Applied Physics Letters, 105(4). https://doi.org/10.1063/1.4891765
Goldflam, M. D., M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, et al. “Voltage switching of a VO2 memory metasurface using ionic gel.” Applied Physics Letters 105, no. 4 (July 28, 2014). https://doi.org/10.1063/1.4891765.
Goldflam MD, Liu MK, Chapler BC, Stinson HT, Sternbach AJ, McLeod AS, et al. Voltage switching of a VO2 memory metasurface using ionic gel. Applied Physics Letters. 2014 Jul 28;105(4).
Goldflam, M. D., et al. “Voltage switching of a VO2 memory metasurface using ionic gel.” Applied Physics Letters, vol. 105, no. 4, July 2014. Scopus, doi:10.1063/1.4891765.
Goldflam MD, Liu MK, Chapler BC, Stinson HT, Sternbach AJ, McLeod AS, Zhang JD, Geng K, Royal M, Kim BJ, Averitt RD, Jokerst NM, Smith DR, Kim HT, Basov DN. Voltage switching of a VO2 memory metasurface using ionic gel. Applied Physics Letters. 2014 Jul 28;105(4).

Published In

Applied Physics Letters

DOI

10.1063/1.4891765

ISSN

0003-6951

Publication Date

July 28, 2014

Volume

105

Issue

4

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences