Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes.

Journal Article

The coexistence of semiconducting and metallic single-walled carbon nanotubes (SWNTs) during synthesis is one of the major bottlenecks that prevent their broad application for the next-generation nanoelectronics. Herein, we present more understanding and demonstration of the growth of highly enriched semiconducting SWNTs (s-SWNTs) with a narrow diameter distribution. An important fact discovered in our experiments is that the selective elimination of metallic SWNTs (m-SWNTs) from the mixed arrays grown on quartz is diameter-dependent. Our method emphasizes controlling the diameter distribution of SWNTs in a narrow range where m-SWNTs can be effectively and selectively etched during growth. In order to achieve narrow diameter distribution, uniform and stable Fe-W nanoclusters were used as the catalyst precursors. About 90% of as-prepared SWNTs fall into the diameter range 2.0-3.2 nm. Electrical measurement results on individual SWNTs confirm that the selectivity of s-SWNTs is ∼95%. The present study provides an effective strategy for increasing the purity of s-SWNTs via controlling the diameter distribution of SWNTs and adjusting the etchant concentration. Furthermore, by carefully comparing the chirality distributions of Fe-W-catalyzed and Fe-catalyzed SWNTs under different water vapor concentrations, the relationship between the diameter-dependent and electronic-type-dependent etching mechanisms was investigated.

Full Text

Duke Authors

Cited Authors

  • Li, J; Ke, C-T; Liu, K; Li, P; Liang, S; Finkelstein, G; Wang, F; Liu, J

Published Date

  • August 11, 2014

Published In

Volume / Issue

  • 8 / 8

Start / End Page

  • 8564 - 8572

PubMed ID

  • 25111952

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

International Standard Serial Number (ISSN)

  • 1936-0851

Digital Object Identifier (DOI)

  • 10.1021/nn503265g

Language

  • eng