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Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell

Publication ,  Journal Article
Barkhouse, DAR; Gunawan, O; Gokmen, T; Todorov, TK; Mitzi, DB
Published in: Progress in Photovoltaics: Research and Applications
January 1, 2012

A power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu 2ZnSn(Se,S) 4 thin-film solar cell made by hydrazine-based solution processing. Key device characteristics were compiled, including light/dark J-V, quantum efficiency, temperature dependence of V oc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high-performance Cu(In,Ga)Se 2. The record kesterite device was shown to be primarily limited by interface recombination, minority carrier lifetime, and series resistance. The new level of device performance points to the significant promise of the kesterites as an emerging and commercially interesting thin-film technology. Copyright © 2011 John Wiley & Sons, Ltd. A power conversion efficiency record of 10.1% is reported for kesterite absorbers, using a Cu 2ZnSn(Se,S) 4 thin-film solar cell made by a hydrazine-based solution process. Key device characteristics are also compiled, including light/dark J-V, quantum efficiency, temperature dependence of V oc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high-performance Cu(In,Ga)Se 2. Attainment of the 10% efficiency level for the kesterites points to significant technological promise for this class of materials. Copyright © 2011 John Wiley & Sons, Ltd.

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Published In

Progress in Photovoltaics: Research and Applications

DOI

EISSN

1099-159X

ISSN

1062-7995

Publication Date

January 1, 2012

Volume

20

Issue

1

Start / End Page

6 / 11

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 4008 Electrical engineering
  • 0912 Materials Engineering
  • 0906 Electrical and Electronic Engineering
  • 0204 Condensed Matter Physics
 

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Barkhouse, D. A. R., Gunawan, O., Gokmen, T., Todorov, T. K., & Mitzi, D. B. (2012). Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell. Progress in Photovoltaics: Research and Applications, 20(1), 6–11. https://doi.org/10.1002/pip.1160
Barkhouse, D. A. R., O. Gunawan, T. Gokmen, T. K. Todorov, and D. B. Mitzi. “Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell.” Progress in Photovoltaics: Research and Applications 20, no. 1 (January 1, 2012): 6–11. https://doi.org/10.1002/pip.1160.
Barkhouse DAR, Gunawan O, Gokmen T, Todorov TK, Mitzi DB. Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell. Progress in Photovoltaics: Research and Applications. 2012 Jan 1;20(1):6–11.
Barkhouse, D. A. R., et al. “Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell.” Progress in Photovoltaics: Research and Applications, vol. 20, no. 1, Jan. 2012, pp. 6–11. Scopus, doi:10.1002/pip.1160.
Barkhouse DAR, Gunawan O, Gokmen T, Todorov TK, Mitzi DB. Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell. Progress in Photovoltaics: Research and Applications. 2012 Jan 1;20(1):6–11.
Journal cover image

Published In

Progress in Photovoltaics: Research and Applications

DOI

EISSN

1099-159X

ISSN

1062-7995

Publication Date

January 1, 2012

Volume

20

Issue

1

Start / End Page

6 / 11

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 4008 Electrical engineering
  • 0912 Materials Engineering
  • 0906 Electrical and Electronic Engineering
  • 0204 Condensed Matter Physics