Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell

Published

Journal Article

A power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu 2ZnSn(Se,S) 4 thin-film solar cell made by hydrazine-based solution processing. Key device characteristics were compiled, including light/dark J-V, quantum efficiency, temperature dependence of V oc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high-performance Cu(In,Ga)Se 2. The record kesterite device was shown to be primarily limited by interface recombination, minority carrier lifetime, and series resistance. The new level of device performance points to the significant promise of the kesterites as an emerging and commercially interesting thin-film technology. Copyright © 2011 John Wiley & Sons, Ltd. A power conversion efficiency record of 10.1% is reported for kesterite absorbers, using a Cu 2ZnSn(Se,S) 4 thin-film solar cell made by a hydrazine-based solution process. Key device characteristics are also compiled, including light/dark J-V, quantum efficiency, temperature dependence of V oc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high-performance Cu(In,Ga)Se 2. Attainment of the 10% efficiency level for the kesterites points to significant technological promise for this class of materials. Copyright © 2011 John Wiley & Sons, Ltd.

Full Text

Duke Authors

Cited Authors

  • Barkhouse, DAR; Gunawan, O; Gokmen, T; Todorov, TK; Mitzi, DB

Published Date

  • January 1, 2012

Published In

Volume / Issue

  • 20 / 1

Start / End Page

  • 6 - 11

Electronic International Standard Serial Number (EISSN)

  • 1099-159X

International Standard Serial Number (ISSN)

  • 1062-7995

Digital Object Identifier (DOI)

  • 10.1002/pip.1160

Citation Source

  • Scopus