Antimony assisted low-temperature processing of CuIn1 - XGa xSe2 - ySy solar cells


Journal Article

Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn1 - xGaxSe2 - ySy (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.4% have been achieved for CIGS devices (0.45 cm2 device area) processed at 400 °C and 360 °C, respectively, with an Sb-incorporation level at 1.2 mol % (relative to the moles of CIGS). Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy, and an average 2-3% absolute efficiency improvement was achieved in Sb-doped samples compared to their Sb-free sister samples. With Sb inclusion, the CIGS film grain growth temperature is lowered to well below 450 °C, a range compatible with flexible polymer substrate materials such as polyimide. This method opens up access to opportunities in low-temperature processing of CIGS solar cells, an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques. © 2010 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Yuan, M; Mitzi, DB; Gunawan, O; Kellock, AJ; Chey, SJ; Deline, VR

Published Date

  • November 1, 2010

Published In

Volume / Issue

  • 519 / 2

Start / End Page

  • 852 - 856

International Standard Serial Number (ISSN)

  • 0040-6090

Digital Object Identifier (DOI)

  • 10.1016/j.tsf.2010.08.135

Citation Source

  • Scopus