Loss mechanisms in hydrazine-processed Cu2 ZnSn (Se,S) 4 solar cells
We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn (Se,S)4(CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu (In,Ga) (Se,S)2(CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell. © 2010 American Institute of Physics.
Gunawan, O; Todorov, TK; Mitzi, DB
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