High mobility solution-deposited chalcogenide films for flexible applications

Published

Conference Paper

The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe2-xSx, In2Se 3 and p-type CuInSe2-xSx TFT channels have been deposited by spin coating from hydrazine- and non-hydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm2/V-s and 106, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. © 2005 IEEE.

Full Text

Duke Authors

Cited Authors

  • Mitzi, DB; Milliron, DJ; Copel, M; Murray, C; Kosbar, L

Published Date

  • October 31, 2005

Published In

  • 2005 Ieee Vlsi Tsa International Symposium on Vlsi Technology Vlsi Tsa Tech, Proceedings of Technical Papers

Start / End Page

  • 41 - 44

International Standard Book Number 10 (ISBN-10)

  • 078039058X

International Standard Book Number 13 (ISBN-13)

  • 9780780390584

Digital Object Identifier (DOI)

  • 10.1109/VTSA.2005.1497075

Citation Source

  • Scopus