High mobility solution-deposited chalcogenide films for flexible applications
The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe2-xSx, In2Se 3 and p-type CuInSe2-xSx TFT channels have been deposited by spin coating from hydrazine- and non-hydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm2/V-s and 106, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. © 2005 IEEE.
Mitzi, DB; Milliron, DJ; Copel, M; Murray, C; Kosbar, L
2005 Ieee Vlsi Tsa International Symposium on Vlsi Technology Vlsi Tsa Tech, Proceedings of Technical Papers
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International Standard Book Number 10 (ISBN-10)
International Standard Book Number 13 (ISBN-13)
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