Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy
Publication
, Journal Article
Miller, DW; Warren, CW; Gunawan, O; Gokmen, T; Mitzi, DB; Cohen, JD
Published in: Applied Physics Letters
October 1, 2012
Transient photocapacitance (TPC) spectra were obtained on a series of Cu 2ZnSn(Se,S) 4 absorber devices with varying Se:S ratios, providing bandgaps (E g) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with E g ≤ 1.2 eV and were near 6.5% for devices with E g ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices. © 2012 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
October 1, 2012
Volume
101
Issue
14
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Miller, D. W., Warren, C. W., Gunawan, O., Gokmen, T., Mitzi, D. B., & Cohen, J. D. (2012). Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy. Applied Physics Letters, 101(14). https://doi.org/10.1063/1.4754834
Miller, D. W., C. W. Warren, O. Gunawan, T. Gokmen, D. B. Mitzi, and J. D. Cohen. “Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy.” Applied Physics Letters 101, no. 14 (October 1, 2012). https://doi.org/10.1063/1.4754834.
Miller DW, Warren CW, Gunawan O, Gokmen T, Mitzi DB, Cohen JD. Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy. Applied Physics Letters. 2012 Oct 1;101(14).
Miller, D. W., et al. “Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy.” Applied Physics Letters, vol. 101, no. 14, Oct. 2012. Scopus, doi:10.1063/1.4754834.
Miller DW, Warren CW, Gunawan O, Gokmen T, Mitzi DB, Cohen JD. Electronically active defects in the Cu 2 ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy. Applied Physics Letters. 2012 Oct 1;101(14).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
October 1, 2012
Volume
101
Issue
14
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences