Solution-processed metal chalcogenide films for p-type transistors


Journal Article

An experiment of solution processing of organic thin film transistors (TFT) to a p-type material, is presented. A soluble precursor was prepared by combining a copper(I) sulfide (Cu 2S) and sulfur (1:2 molar ratio) solution with an indium(III) selenide (In 2se 3) and selenium (1:1) solution. Thermally oxidized silicon wafers were cleaned using a piranha process (4:1 concentrated sulfuric acid to hydrogen peroxide) to prepare the films. The experimental result reveals that it is possible to fabricate preliminary ambipolar TFTs within the same Cu 1-xInSe 2-y material system by preparing films with selenium deficit.

Full Text

Duke Authors

Cited Authors

  • Milliron, DJ; Mitzi, DB; Copel, M; Murray, CE

Published Date

  • February 7, 2006

Published In

Volume / Issue

  • 18 / 3

Start / End Page

  • 581 - 590

International Standard Serial Number (ISSN)

  • 0897-4756

Digital Object Identifier (DOI)

  • 10.1021/cm052300r

Citation Source

  • Scopus