Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface


Journal Article

Energy band alignments between CdS and Cu2ZnSn (SxSe1-x)4(CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S] / [S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes. © 2011 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Haight, R; Barkhouse, A; Gunawan, O; Shin, B; Copel, M; Hopstaken, M; Mitzi, DB

Published Date

  • June 20, 2011

Published In

Volume / Issue

  • 98 / 25

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.3600776

Citation Source

  • Scopus