High-mobility p-type transistor based on a spin-coated metal telluride semiconductor
The deposition of p-type CuInTe 2 as the telluride-based semiconductor, was investigated. Structurally, the CuInTe 2 chalcopyrite can be integrated as a II-VI zinc-blende analog, with the Zn atoms of the archetypal ZnS structure. The structure is alternatively substituted by Cu and In atoms leading to a doubling of the basis cubic unit cell along the z-direction. A new stepwise process was devised for dissolution, which involved separate indium and copper based precursor solutions. A soluble In 2 Te 3 precursor, with approximate composition was prepared by stirring In 2 Te 3 in hydrazine at room temperature and evaporating the resulting solution. Thermal decomposition of the nominally amorphous precursor began at near-ambient temperatures. Films of binary In 2 Te 3 can also be prepared by either drop-casting or spin-coating the In 2 Te 3 precursor solution, using a low-temperature heat treatment.
Mitzi, DB; Copel, M; Murray, CE
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