Minority carrier diffusion length extraction in Cu2ZnSn(Se,S) 4 solar cells

Published

Journal Article

We report measurement of minority carrier diffusion length (Ld) for high performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells in comparison with analogous Cu(In,Ga)(S,Se)2 (CIGSSe) devices. Our Ld extraction method involves performing systematic measurements of the internal quantum efficiency combined with separate capacitance-voltage measurement. This method also enables the measurement of the absorption coefficient of the absorber material as a function of wavelength in a finished device. The extracted values of Ld for CZTSSe samples are at least factor of 2 smaller than those for CIGSSe samples. Combined with minority carrier lifetime (τ) data measured by time-resolved photoluminescence, we deduce the minority carrier mobility (μe), which is also relatively low for the CZTSSe samples. © 2013 AIP Publishing LLC.

Full Text

Duke Authors

Cited Authors

  • Gokmen, T; Gunawan, O; Mitzi, DB

Published Date

  • September 21, 2013

Published In

Volume / Issue

  • 114 / 11

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.4821841

Citation Source

  • Scopus