Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor

Published

Journal Article

The use of In2Se3 as a semiconductor for the low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor was discussed. The hydrazinium precursor was isolated in bulk form to avoid hydrazine use during film deposition. Thin-film transistors (TFT) based on the spin-coated chalcogenide films was fabricated employing a relatively thin (250 Å) thermal SiO3 gate insulator and co-evporated gold/indium contacts. It was found that at low drain voltage, the TFT demonstrates typical transistor-like behavior, as drain current increases linearly with drain voltage.

Full Text

Duke Authors

Cited Authors

  • Mitzi, DB; Copel, M; Chey, SJ

Published Date

  • May 13, 2005

Published In

Volume / Issue

  • 17 / 10

Start / End Page

  • 1285 - 1289

International Standard Serial Number (ISSN)

  • 0935-9648

Digital Object Identifier (DOI)

  • 10.1002/adma.200401443

Citation Source

  • Scopus