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Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor

Publication ,  Journal Article
Mitzi, DB; Copel, M; Chey, SJ
Published in: Advanced Materials
May 13, 2005

The use of In2Se3 as a semiconductor for the low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor was discussed. The hydrazinium precursor was isolated in bulk form to avoid hydrazine use during film deposition. Thin-film transistors (TFT) based on the spin-coated chalcogenide films was fabricated employing a relatively thin (250 Å) thermal SiO3 gate insulator and co-evporated gold/indium contacts. It was found that at low drain voltage, the TFT demonstrates typical transistor-like behavior, as drain current increases linearly with drain voltage.

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Published In

Advanced Materials

DOI

ISSN

0935-9648

Publication Date

May 13, 2005

Volume

17

Issue

10

Start / End Page

1285 / 1289

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

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Mitzi, D. B., Copel, M., & Chey, S. J. (2005). Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor. Advanced Materials, 17(10), 1285–1289. https://doi.org/10.1002/adma.200401443
Mitzi, D. B., M. Copel, and S. J. Chey. “Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor.” Advanced Materials 17, no. 10 (May 13, 2005): 1285–89. https://doi.org/10.1002/adma.200401443.
Mitzi DB, Copel M, Chey SJ. Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor. Advanced Materials. 2005 May 13;17(10):1285–9.
Mitzi, D. B., et al. “Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor.” Advanced Materials, vol. 17, no. 10, May 2005, pp. 1285–89. Scopus, doi:10.1002/adma.200401443.
Mitzi DB, Copel M, Chey SJ. Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor. Advanced Materials. 2005 May 13;17(10):1285–1289.
Journal cover image

Published In

Advanced Materials

DOI

ISSN

0935-9648

Publication Date

May 13, 2005

Volume

17

Issue

10

Start / End Page

1285 / 1289

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences