High speed terahertz modulation from metamaterials with embedded high electron mobility transistors.


Journal Article

We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate switching values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz). Our results demonstrate the viability of incorporating metamaterials into mature semiconductor technologies and establish a new path toward achieving electrically tunable THz devices.

Full Text

Duke Authors

Cited Authors

  • Shrekenhamer, D; Rout, S; Strikwerda, AC; Bingham, C; Averitt, RD; Sonkusale, S; Padilla, WJ

Published Date

  • May 2011

Published In

Volume / Issue

  • 19 / 10

Start / End Page

  • 9968 - 9975

PubMed ID

  • 21643254

Pubmed Central ID

  • 21643254

Electronic International Standard Serial Number (EISSN)

  • 1094-4087

International Standard Serial Number (ISSN)

  • 1094-4087

Digital Object Identifier (DOI)

  • 10.1364/oe.19.009968


  • eng