Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy

Published

Journal Article

© 2014 AIP Publishing LLC. InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1-x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

Full Text

Duke Authors

Cited Authors

  • Kong, W; Mohanta, A; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS

Published Date

  • September 29, 2014

Published In

Volume / Issue

  • 105 / 13

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4896849

Citation Source

  • Scopus