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Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy

Publication ,  Journal Article
Kong, W; Mohanta, A; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS
Published in: Applied Physics Letters
September 29, 2014

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10-12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of InxAl(1-x)N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

September 29, 2014

Volume

105

Issue

13

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Kong, W., Mohanta, A., Roberts, A. T., Jiao, W. Y., Fournelle, J., Kim, T. H., … Brown, A. S. (2014). Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 105(13). https://doi.org/10.1063/1.4896849
Kong, W., A. Mohanta, A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy.” Applied Physics Letters 105, no. 13 (September 29, 2014). https://doi.org/10.1063/1.4896849.
Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, et al. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2014 Sep 29;105(13).
Kong, W., et al. “Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy.” Applied Physics Letters, vol. 105, no. 13, Sept. 2014. Scopus, doi:10.1063/1.4896849.
Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 2014 Sep 29;105(13).

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

September 29, 2014

Volume

105

Issue

13

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences