Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties


Journal Article

© 2014 AIP Publishing LLC. Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm-3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm-3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

Full Text

Duke Authors

Cited Authors

  • Park, HH; Jayaraman, A; Heasley, R; Yang, C; Hartle, L; Mankad, R; Haight, R; Mitzi, DB; Gunawan, O; Gordon, RG

Published Date

  • November 17, 2014

Published In

Volume / Issue

  • 105 / 20

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4901899

Citation Source

  • Scopus