Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3×3)-3C-SiC(1¯ 1¯ 1¯) reconstruction

Published

Journal Article

© 2015 American Physical Society. We address the stability of the surface phases that occur on the C side of 3C-SiC(1¯1¯1¯) at the onset of graphene formation. In this growth range, experimental reports reveal a coexistence of several surface phases. This coexistence can be explained by a Si-rich model for the unknown (3×3) reconstruction, the known (2×2)C adatom phase, and the graphene-covered (2×2)C phase. By constructing an ab initio surface phase diagram using a van der Waals corrected density functional, we show that the formation of a well defined interface structure like the "buffer layer" on the Si side is blocked by Si-rich surface reconstructions.

Full Text

Duke Authors

Cited Authors

  • Nemec, L; Lazarevic, F; Rinke, P; Scheffler, M; Blum, V

Published Date

  • April 17, 2015

Published In

Volume / Issue

  • 91 / 16

Electronic International Standard Serial Number (EISSN)

  • 1550-235X

International Standard Serial Number (ISSN)

  • 1098-0121

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.91.161408

Citation Source

  • Scopus