Carbon Nanotube Electronics


Book Section

© 2015 John Wiley and Sons Ltd. Among the options for a field-effect transistor (FET) channel that can outperform silicon at low voltages, the single-walled carbon nanotube (CNT) is a strong contender. Composed of a single atomic layer of hexagonally arranged carbon atoms that form a cylinder of ∼1 nm diameter, the CNT is able to transport electrons with zero resistance (ballistic transport) while also having an intrinsic semiconducting band gap that enables it to be switched off. Promises of a digital technology driven by CNTFETs include high-performance operation at low voltage with aggressive scalability to sub-10 nm device dimensions. This chapter provides a brief introduction to the electronic properties of CNTs and the basic operating principles of CNTFETs with highlights of the most critical device aspects. Advantages and challenges to ultimate scalability are presented, with separate consideration of the channel and contact lengths. The most pervasive challenges for CNTs are related to their purification and controlled placement - these imperative material obstacles are discussed with consideration of the substantial progress that has been made to address them. Finally, the advantages of pursuing CNTs for the next digital switch are summarized with respect to the key metrics needed for future computing technologies.

Full Text

Duke Authors

Cited Authors

  • Franklin, AD

Published Date

  • January 27, 2015

Volume / Issue

  • 9781118447741 /

Book Title

  • Emerging Nanoelectronic Devices

Start / End Page

  • 315 - 335

International Standard Book Number 13 (ISBN-13)

  • 9781118447741

Digital Object Identifier (DOI)

  • 10.1002/9781118958254.ch16

Citation Source

  • Scopus