A metallization and bonding approach for high performance carbon nanotube thermal interface materials.

Published

Journal Article

A method has been developed to create vertically aligned carbon nanotube (VACNT) thermal interface materials that can be attached to a variety of metallized surfaces. VACNT films were grown on Si substrates using standard CVD processing followed by metallization using Ti/Au. The coated CNTs were then bonded to metallized substrates at 220 °C. By reducing the adhesion of the VACNTs to the growth substrate during synthesis, the CNTs can be completely transferred from the Si growth substrate and used as a die attachment material for electronic components. Thermal resistance measurements using a photoacoustic technique showed thermal resistances as low as 1.7 mm(2) K W(-1) for bonded VACNT films 25-30 µm in length and 10 mm(2) K W(-1) for CNTs up to 130 µm in length. Tensile testing demonstrated a die attachment strength of 40 N cm(-2) at room temperature. Overall, these metallized and bonded VACNT films demonstrate properties which are promising for next-generation thermal interface material applications.

Full Text

Duke Authors

Cited Authors

  • Cross, R; Cola, BA; Fisher, T; Xu, X; Gall, K; Graham, S

Published Date

  • November 2010

Published In

Volume / Issue

  • 21 / 44

Start / End Page

  • 445705 -

PubMed ID

  • 20935353

Pubmed Central ID

  • 20935353

Electronic International Standard Serial Number (EISSN)

  • 1361-6528

International Standard Serial Number (ISSN)

  • 0957-4484

Digital Object Identifier (DOI)

  • 10.1088/0957-4484/21/44/445705

Language

  • eng