QUENCHING OF THE HALL RESISTANCE IN A NOVEL GEOMETRY

Published

Journal Article

We review experiments on the observation of Hall resistance anomalies in ballistic Hall junctions of novel geometries, in submicron GaAs-Al x Ga 1−x As heterostructure devices. We demonstrate that the low magnetic field Hall resistance is greatly influenced by the junction geometry, and that particular geometries are required to give rise to a phenomenon known as “quenching” of the Hall resistance where the conventional linear Hall resistance is suppressed to nearly zero, and to a related plateau feature at slightly higher magnetic fields, known as the “last plateau.” These anomalies are explained in terms of the collimation of ballistic electron beams by specific geometric structures and the scattering properties of the Hall junction side walls.

Full Text

Duke Authors

Cited Authors

  • CHANG, AM

Published Date

  • January 10, 1991

Published In

Volume / Issue

  • 05 / 01

Start / End Page

  • 21 - 37

Published By

Electronic International Standard Serial Number (EISSN)

  • 1793-6640

International Standard Serial Number (ISSN)

  • 0217-9849

Digital Object Identifier (DOI)

  • 10.1142/s0217984991000046

Language

  • en