Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

Published

Journal Article

© 2015 AIP Publishing LLC. Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1-x-y)N with low In (x=0.01-0.05) and high Al composition (y=0.40-0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280nm-320nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

Full Text

Duke Authors

Cited Authors

  • Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS

Published Date

  • September 28, 2015

Published In

Volume / Issue

  • 107 / 13

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4931942

Citation Source

  • Scopus