Galvanic cell formation during mems release processes: Implications for sub-micron device fabrication

Published

Conference Paper

The addition of a noble metallization layer to doped polysilicon results in the formation of a galvanic cell when the composite is submerged in aqueous hydrofluoric acid. A corrosion current created by the galvanic cell promotes the electrochemical etching of silicon in contact with the acidic solution. Here, we demonstrate the galvanic corrosion of phosphorus-doped polysilicon when a gold metallization layer is used. As a consequence of galvanic corrosion, a number of significant changes to the polysilicon structural layers are observed including a finite polysilicon etch rate, an increase in electrical resistance (both ohmic and non-ohmic), a change in curvature (i.e. mechanical shape), and a decrease in mechanical resonant frequency. The observed change in electrical and mechanical performance on micromechanical structures necessitates more careful consideration of the post-processing procedures, as well as the choice of device metallization layer. The physical impact of corrosion becomes even more significant as device scale is decreased. Copyright © 2004 by ASME.

Full Text

Duke Authors

Cited Authors

  • Miller, DC; Gall, KA; Stoldt, CR

Published Date

  • January 1, 2004

Published In

Start / End Page

  • 35 - 44

International Standard Serial Number (ISSN)

  • 1096-665X

Digital Object Identifier (DOI)

  • 10.1115/IMECE2004-62088

Citation Source

  • Scopus