End-bonded contacts for carbon nanotube transistors with low, size-independent resistance


Journal Article

Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock.We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to sizeindependent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub-10-nanometer contact length, showing a device resistance below 36 kilohms and oncurrent above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier.This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.

Full Text

Duke Authors

Cited Authors

  • Cao, Q; Han, SJ; Tersoff, J; Franklin, AD; Zhu, Y; Zhang, Z; Tulevski, GS; Tang, J; Haensch, W

Published Date

  • October 2, 2015

Published In

Volume / Issue

  • 350 / 6256

Start / End Page

  • 68 - 72

Electronic International Standard Serial Number (EISSN)

  • 1095-9203

International Standard Serial Number (ISSN)

  • 0036-8075

Digital Object Identifier (DOI)

  • 10.1126/science.aac8006

Citation Source

  • Scopus