Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures.
Publication
, Journal Article
Gong, Y; Yerci, S; Li, R; Dal Negro, L; Vucković, J
Published in: Optics express
November 2009
Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is also discussed.
Duke Scholars
Published In
Optics express
DOI
EISSN
1094-4087
ISSN
1094-4087
Publication Date
November 2009
Volume
17
Issue
23
Start / End Page
20642 / 20650
Related Subject Headings
- Optics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Gong, Y., Yerci, S., Li, R., Dal Negro, L., & Vucković, J. (2009). Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures. Optics Express, 17(23), 20642–20650. https://doi.org/10.1364/oe.17.020642
Gong, Yiyang, Selçuk Yerci, Rui Li, Luca Dal Negro, and Jelena Vucković. “Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures.” Optics Express 17, no. 23 (November 2009): 20642–50. https://doi.org/10.1364/oe.17.020642.
Gong Y, Yerci S, Li R, Dal Negro L, Vucković J. Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures. Optics express. 2009 Nov;17(23):20642–50.
Gong, Yiyang, et al. “Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures.” Optics Express, vol. 17, no. 23, Nov. 2009, pp. 20642–50. Epmc, doi:10.1364/oe.17.020642.
Gong Y, Yerci S, Li R, Dal Negro L, Vucković J. Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures. Optics express. 2009 Nov;17(23):20642–20650.
Published In
Optics express
DOI
EISSN
1094-4087
ISSN
1094-4087
Publication Date
November 2009
Volume
17
Issue
23
Start / End Page
20642 / 20650
Related Subject Headings
- Optics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics