High efficiency Cu 2ZnSn(S xSe 1-x) 4 thin film solar cells by thermal co-evaporation


Journal Article

We report on the device results of thermally evaporated high efficiency Cu 2ZnSn(S xSe 1-x) 4 (CZTSSe) thin film solar cells with power conversion efficiencies of 7.1% (x=1.0) and 7.5% (x=0.34). We have carried out extensive electrical and structural characterization of CZTSSe solar cells to identify major factors that limit the efficiency. Bias-dependent quantum efficiency measurements revealed ineffective collection of charge carriers photo-generated deep in the absorber layer suggesting a short minority carrier diffusion length, which was confirmed by time-resolved photoluminescence measurements. Temperature-dependence of the series resistance of the devices is consistent with the presence of a Schottky-type barrier in the back contact, likely caused by secondary phases near the CZTS/Mo interface and/or an interfacial MoS x layer. © 2011 IEEE.

Full Text

Duke Authors

Cited Authors

  • Shin, B; Wang, K; Gunawan, O; Reuter, KB; Chey, SJ; Bojarczuk, NA; Todorov, T; Mitzi, DB; Guha, S

Published Date

  • December 1, 2011

Published In

Start / End Page

  • 002510 - 002514

International Standard Serial Number (ISSN)

  • 0160-8371

Digital Object Identifier (DOI)

  • 10.1109/PVSC.2011.6186456

Citation Source

  • Scopus