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Published

Journal Article

A solution processing technique for the deposition of ultrathin high mobility SnS2-xSex films was demonstrated. The precursor process employed excess chalcogen to directly improve the solubility and film formation properties of main group metal chalogenides in hydrazine or hydrazine/water mixtures. The precursor was isolated by dissolving InSe and Se in hydrazine using similar conditions employed for the tin sulfide system. The key advantages of this method include high performance films and simple low cost approach.

Full Text

Duke Authors

Cited Authors

  • Mitzi, D; Copel, M; Chey, SJ

Published Date

  • January 1, 2005

Published In

Volume / Issue

  • 18 / 6

Start / End Page

  • 38 - 39

International Standard Serial Number (ISSN)

  • 0961-1290

Digital Object Identifier (DOI)

  • 10.1016/S0961-1290(05)71232-1

Citation Source

  • Scopus