Thin-film transistors based on spin-coated chalcogenide semiconductor channels

Published

Journal Article

The production of high-performance solution-processed semiconductor films represents an important materials challenge, with achievement of field-effect mobilities >10 cm 2 /V-sec being particularly desirable for high-speed low-cost microelectronic applications. While most soluble semiconductor research has focused on organic systems, this review addresses a hydrazinium precursor approach for solution-processing high-quality inorganic films. Ultrathin SnSe 2-x S x channel layers, spin coated from a hydrazine solution of chalcogenides, yield field-effect mobilities and on-off ratios as high as 12 cm 2 /V-s and 10 6 , respectively. Analogous devices have also been prepared from water-hydrazine solvent mixtures (20% hydrazine by volume), thereby reducing the concentration of highly toxic hydrazine during spin-coating. Additionally, In 2 Se 3 channel layers have been demonstrated, spin coated without the use of hydrazine as solvent, yielding μ sat = 16.5 cm 2 /V-s, μ lin = 4.9 cm 2 /V-s, I on /I off = 10 6 , with a subthreshold swing as low as S = 450 mV/decade. The operating voltages in these latter devices have been reduced to 8V through the use of a relatively thin (250 Å) SiO x gate insulator. Reductions in the use of hydrazine and in the TFT operating voltage improve fabrication and operational compatibility of the devices with respect to electronics industry standards.

Duke Authors

Cited Authors

  • Mitzi, DB; Copel, M; Murray, CE; Kosbar, LL; Afzali, A

Published Date

  • December 19, 2005

Published In

  • Proceedings Electrochemical Society

Volume / Issue

  • PV 2004-15 /

Start / End Page

  • 189 - 199

Citation Source

  • Scopus