Writing without disturb on phase change memories by integrating coding and layout design

Conference Paper

We integrate coding techniques and layout design to elimi- nate write-disturb in phase change memories (PCMs), while enhancing lifetime and host-visible capacity. We first pro- pose a checkerboard confguration for cell layout to elimi- nate write-disturb while doubling the memory lifetime. We then introduce two methods to jointly design Write-Once- Memory (WOM) codes and layout. The first WOM-layout design improves the lifetime by more than double without compromising the host-visible capacity. The second design applies WOM codes to even more dense layouts to achieve both lifetime and capacity gains. The constructions demon- strate that substantial improvements to lifetime and host- visible capacity are possible by co-designing coding and cell layout in PCM.

Full Text

Duke Authors

Cited Authors

  • Eslami, A; Velasco, A; Vahid, A; Mappouras, G; Calderbank, R; Sorin, DJ

Published Date

  • October 5, 2015

Published In

  • Acm International Conference Proceeding Series

Volume / Issue

  • 05-08-October-2015 /

Start / End Page

  • 71 - 77

International Standard Book Number 13 (ISBN-13)

  • 9781450336048

Digital Object Identifier (DOI)

  • 10.1145/2818950.2818962

Citation Source

  • Scopus