Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN


Journal Article

Epitaxial lateral overgrowth (ELO) was employed for both c -plane and a -plane GaN layers on sapphire, and a more pronounced optical improvement was observed for the a -plane GaN as evidenced by the significantly increased band edge photoluminescence (PL). Room temperature near-field scanning optical microscopy studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to reduced density of dislocations, and for the a -plane ELO GaN sample the wings and the windows were clearly discernible from PL mapping. Time-resolved PL measurements revealed biexponential decays with time constants that were significantly enhanced for the a -plane ELO GaN (τ1 =0.08 ns, τ2 =0.25 ns) when compared to the non-ELO control sample but were still much shorter than those for the c -plane ELO GaN (τ1 =0.26 ns, τ2 =0.90 ns). © 2006 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Ni, X; Fu, Y; Morko̧, H; Everitt, HO

Published Date

  • December 1, 2006

Published In

Volume / Issue

  • 89 / 26

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2424677

Citation Source

  • Scopus