Improved structural quality and carrier decay times in GaN epitaxy on SiN and TiN porous network templates

Published

Conference Paper

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μn-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Litton, CW; Fu, Y; Moon, YT; Yun, F; Everitt, HO; Morkoç, H

Published Date

  • January 1, 2006

Published In

Volume / Issue

  • 527-529 / PART 2

Start / End Page

  • 1505 - 1508

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

International Standard Serial Number (ISSN)

  • 0255-5476

International Standard Book Number 13 (ISBN-13)

  • 9780878494255

Digital Object Identifier (DOI)

  • 10.4028/0-87849-425-1.1505

Citation Source

  • Scopus