Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

Published

Journal Article

A measurement of stimulated emission (SE) from ZnO thin films grown on c-plane sapphire by rf sputtering was performed. At 10 K, free exciton transitions were observed in the photoluminescence (PL), transmission and reflection spectra of the sample annealed at 950°C. SE resulting from both electron hole plasma formation and exciton-exciton scattering was observed at moderate excitation energy densities in the annealed samples. The observation of low threshold exciton-exciton scattering-induced SE showed that in rf-sputtered ZnO thin films, excitonic laser action could be obtained.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Teke, A; Liu, C; Cho, SJ; Morkoç, H; Everitt, HO

Published Date

  • April 26, 2004

Published In

Volume / Issue

  • 84 / 17

Start / End Page

  • 3223 - 3225

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.1713034

Citation Source

  • Scopus